Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/6196
Title: Structural and electrical properties of polycrystalline Ag<sub>x</sub>Ga<sub>2</sub><sub>-x</sub>Se<sub>2</sub> (0.4≤ x ≤1.6)thin films
Authors: Bhuiyan, M R A
Saha, D K
Hasan, S M Firoz
Keywords: AGS thin films
SEL technique
Structural properties
Electrical properties
Thin films
Issue Date: Nov-2009
Publisher: CSIR
Abstract: Thin films of Ag<sub>x</sub>Ga<sub>2</sub><sub>-x</sub>Se<sub>2</sub> (AGS) have been prepared onto glass substrates by stacked elemental layer (SEL) deposition technique in vacuum. The atomic composition of the films has been measured by energy dispersive analysis of X-ray (EDAX) method. The structural and electrical properties of the films are ascertained by X-ray diffraction (XRD) and standard <i>dc</i> method using a cryostat, respectively. The structural and electrical parameters have been found for different non-molecularity of the films. The films ascertain the compositional uniformity. The X-ray diffraction (XRD) reveals that the films are polycrystalline in nature. The electrical conductivity of the films (at room temperature) having different non-molecularity has been found to vary from 1.36 <img src='/image/spc_char/cross.gif'> 10<sup>-6</sup> to 4.93 <img src='/image/spc_char/cross.gif'> 10<sup>-3 </sup>(Ω-cm)<sup>-1</sup>. These films support thermally activated process. The activation energies vary between 21.61 and 60.64 meV as non-molecularity varies between -0.798 and 1.710.
Description: 787-792
URI: http://hdl.handle.net/123456789/6196
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.47(11) [November 2009]

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