Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorKarayel, Arzu-
dc.contributor.authorGupta, Meenal-
dc.contributor.authorAhmad, Gulzar-
dc.contributor.authorKumar, Yogesh-
dc.contributor.authorSharma, Shatendra-
dc.identifier.issn0975-0959 (Online); 0301-1208 (Print)-
dc.description.abstractElectrodes fabricated using graphene are quite promising for electric double layer capacitors. However graphene has the limitations of low ‘Quantum Capacitance (QC)’ near fermi level due to the presence of Dirac point that can be modified by doping graphenewith suitable dopant. The density functional theory DFT calculations are performed for doped graphene using Boron, Sulphur and phosphorus as dopants to improve the quantum capacitance of electrodes fabricated using graphene. The calculations are performed at temperatures of 233, 300 and 353 °K. From present calculations no significant temperature dependence of quantum capacitance is observed, however a marked increase in QC of value above 58μFcm-2 is seen. Forphosphorus and Sulphur doped graphene a significant energy gap shift of ~ 1.5 eV from the Fermi level is observed that significantly increases the QC at Fermi level to a high value of ~ 35 μFcm-2. With boron dopant as well, a shift of energy gap ~ 1.25eV from the Fermi level is observed. The shift in Dirac point increases quantum capacitance at Fermi level that in turn can increase the energy density of supercapacitor remarkably. The effect of increasing doping concentration on quantum capacitance is also investigated. These results suggest that doping of graphene may result in significant increase in QC near Fermi level, if the dopants are selected carefully depending upon the use of graphene as a positive or negative electrode. The results of these calculations reveal that the problem of low QC of graphene in the range of interest can be addressed by modifying itssurface and structure chemistry which may increase energy density in supercapacitors.en_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.58(12) [December 2020]en_US
dc.subjectQuantum capacitanceen_US
dc.subjectDensity of Statesen_US
dc.subjectBand Structureen_US
dc.titlePhysical properties of heteroatom doped graphene monolayers in relation to supercapacitive performanceen_US
Appears in Collections:IJPAP Vol.58(12) [December 2020]

Files in This Item:
File Description SizeFormat 
IJPAP 58(12) 885-891.pdf874.67 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.