Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/55672
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dc.contributor.authorAggarwal, Bhawna-
dc.contributor.authorArora, Yogita-
dc.contributor.authorDhona, Jasdeep Kaur-
dc.date.accessioned2020-11-24T08:17:20Z-
dc.date.available2020-11-24T08:17:20Z-
dc.date.issued2020-08-
dc.identifier.issn0975-1017 (Online); 0971-4588 (Print)-
dc.identifier.urihttp://nopr.niscair.res.in/handle/123456789/55672-
dc.description934-938en_US
dc.description.abstractThis paper has proposed a temperature insensitive current reference (CR) using Widlar current source. This CR has overwhelmed the direct relation of current to temperature present in Widlar current source. To obtain temperature insensitivity the proposed CR has been combined the complementary temperature behavior of current across MOSFET and BJT. Eldospice has supported the simulations of the proposed circuit using level 53, 0.18 µm CMOS technology with the help of EldoSpice. The proposed circuit has presented almost constant reference current of 63µA at a supply voltage of 1.8V for a temperature range of -30 to 100 °C. The proposed circuit has shown the maximum variation of 0.1µA as compared to 24.87µA in conventional Widlar current source.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJEMS Vol.27(4) [August 2020]en_US
dc.subjectWidlar current sourceen_US
dc.subjectBandgap current referenceen_US
dc.subjectPTAT circuiten_US
dc.subjectCTAT circuiten_US
dc.subjectTemperature insensitivityen_US
dc.titleBandgap current reference using widlar current sourceen_US
dc.typeArticleen_US
Appears in Collections:IJEMS Vol.27(4) [August 2020]

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