Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/55200
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dc.contributor.authorPatel, Shivangi S-
dc.contributor.authorMistry, Bhaumik V-
dc.contributor.authorZinzuvadiya, Sushant-
dc.contributor.authorJoshi, U S-
dc.date.accessioned2020-09-22T07:03:50Z-
dc.date.available2020-09-22T07:03:50Z-
dc.date.issued2020-09-
dc.identifier.issn0975-0959 (Online); 0301-1208 (Print)-
dc.identifier.urihttp://nopr.niscair.res.in/handle/123456789/55200-
dc.description667-672en_US
dc.description.abstractSimple high energy laser photon irradiation is a handy tool to tune the functional properties of wide band gap oxide-based devices. Present study reports on the effects of laser photon irradiation on electrical transport behaviour of n-ZnO/p-Si p-n junctions. The n-type conductivity of ZnO was optimised by doping of stoichiometric amount of Al in ZnO. The n-ZnO/p-Si junctions were grown on p-Si (100) substrate by pulsed laser deposition. The structural property was analysed by X-ray diffraction. Morphological study was done using atomic force microscopy (AFM) which shows smooth and mono-dispersed surfaces of the p-n junction. The current-voltage (I-V) characteristic of the n-ZnO/p-Si devices have been measured at room temperature in the dark and under illumination. Moreover, the effects of 532 nm visible laser light irradiation on the electric parameter of n-AZO/p-Si p-n junctions were investigated. The characteristic parameters of the junctions such as barrier height, ideality factor and series resistance were determined from the current-voltage measurement. The results show a promise of ZnO based diode structure for its optoelectronic applications.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.58(09) [September 2020]en_US
dc.subjectZnOen_US
dc.subjectPulse laser depositionen_US
dc.subjectPhoton irradiationen_US
dc.subjectOptoelectronic devicesen_US
dc.titlePhoton irradiation effects on electrical properties of n-ZnO/p-Si junctions for optoelectronic deviceen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.58(09) [September 2020]

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