Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/54992
Title: Design of Step down Structure RF-MEMS Shunt Capacitive Switch for Low-Pull-In Voltage
Authors: Sravani, K Girija
Guha, K
Lysenko, I E
Rao, K Srinivasa
El Sinawi, Ameen
Keywords: Meander Techniques;Perforations;Pull-in Voltage;RF-MEMS Shunt Switch;Spring Constant
Issue Date: Jul-2020
Publisher: NISCAIR-CSIR, India
Abstract: In this paper, designs and simulations of a new RF MEMS step-down structure of a capacitive shunt switch using different meandering methods are presented. The beam and dielectric materials are taken as gold and silicon nitride for the proposed switch. The switch required actuation voltage is 7.9 V for the non-uniform one meander technique.
Page(s): 595-597
URI: http://nopr.niscair.res.in/handle/123456789/54992
ISSN: 0975-1084 (Online); 0022-4456 (Print)
Appears in Collections:JSIR Vol.79(07) [July 2020]

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