Please use this identifier to cite or link to this item:
Title: Performance of ZnO-Nb2O5 core/shell and aluminium doped ZnO electron transporting layer with CdS/CdSe quantum dot-sensitized solar cells
Authors: Venkatachalam, P
Rajalakshmi, S
Keywords: Quantum dot solar cell;Core/shell structure;Doping;XRD;TEM;Photovoltaic;EIS
Issue Date: Jun-2020
Publisher: NISCAIR-CSIR, India
Abstract: In the present investigation, solar cells have been fabricated using Cds/CdSe quantum dots sensitized ZnO photoanode for solar cell application. Photocurrent-voltage analysis and electrochemical impedance spectroscopy (EIS) measurements have been performed to investigate the electron transport and recombination of charge carriers in quantum dot-sensitized solar cells (QDSSCs) based on ZnO photoanodes. This dynamic study reveals that the CdS/CdSe sensitized aluminium (Al) doped ZnO NPs photoanode solar cell performs ultrafast electron transport and high charge collection efficiency (80 %). As a consequence, a power conversion efficiency as high as 5.32 % (JSC = 12.86 mA/cm2, VOC = 600 mV, FF = 69 %) for aluminium doped ZnO NPs/CdS/CdSe photoelectrode based QDSSC is observed under one sun AM 1.5 G illumination (100 mW cm-2). This result highlights the necessity of treating QD-sensitized solar cells from another perspective than dye sensitized solar cells, considering the fundamental differences in their behavior.
Page(s): 470-477
ISSN: 0975-0959 (Online); 0301-1208 (Print)
Appears in Collections:IJPAP Vol.58(06) [June 2020]

Files in This Item:
File Description SizeFormat 
IJPAP 58(6) 470-477.pdf382.53 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.