Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/54210
Title: Conduction mechanism and defect density of states in amorphous Te15 (Se100-xBix)85 glassy alloys
Authors: Kumar, Kameshwar
Thakur, Nagesh
Keywords: Chalcogenide glasses;Space charge limited conduction;Localized states;Density of states
Issue Date: Mar-2020
Publisher: NISCAIR-CSIR, India
Abstract: The present paper reports the dc conductivity measurement up to 100 V for pallets of Te15 (Se100-xBix)85 (x=0, 1, 2, 3, 4 at %) glassy alloys in temperature range (303-343 K). The dc conductivity is calculated from the I-V characteristics curves of the pellets of bulk samples prepared by melt quenching technique. The samples obey Ohm’s law in the lower (0-25 V) voltage range whereas the behaviour in the higher (25-100 V) voltage range is non-ohmic. The experimental results for all the samples fit well with the theory of space charge limited conduction SCLC for uniform distribution of localized states in the mobility gap. The density of defect states is calculated for the glassy alloys and is found to increase with Bi content. The increase in defect density of states can be explained on basis of electro negativity difference of Bi as compared to host elements. The increase in dc conductivity is probably due to Se-Bi bond concentration in the Se-Te-Bi glasses.
Page(s): 189-192
URI: http://nopr.niscair.res.in/handle/123456789/54210
ISSN: 0975-0959 (Online); 0301-1208 (Print)
Appears in Collections:IJPAP Vol.58(03) [March 2020]

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