Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/51116
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dc.contributor.authorGaur, Jyotshana-
dc.contributor.authorSharma, Hitesh Kumar-
dc.contributor.authorSharma, Sanjeev K-
dc.contributor.authorSingh, Beer Pal-
dc.date.accessioned2019-10-23T07:14:52Z-
dc.date.available2019-10-23T07:14:52Z-
dc.date.issued2019-10-
dc.identifier.issn0975-0959 (Online); 0301-1208 (Print)-
dc.identifier.urihttp://nopr.niscair.res.in/handle/123456789/51116-
dc.description709-712en_US
dc.description.abstractLead sulphide (PbS) nanocrystalline thin films have been grown from sputtering with the variation of growth temperature and RF-Power. The intensity of single dominant peak (200) in XRD-pattern increases by increasing the growth temperature from 175 oC to 200 oC and RF power from 80 W to 100 W, respectively. The crystallite size and the strain of as-deposited PbS thin films have been calculated from XRD-peak profile analysis. Microscopic surface and cross-section images show the improvement in thin films growth in terms of alignment of grains and thickness. The band gap of PbS thin films has been determined from UV-Vis absorption spectra, where the band gap decreases from 1.98 eV to 1.72 eV as the growth temperature and power increased from 175 °C and 80 W to 200 °C and 100 W.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.57(10) [October 2019]en_US
dc.subjectPbS thin filmsen_US
dc.subjectGrowth temperature and RF-poweren_US
dc.subjectStructuralen_US
dc.subjectOptical propertiesen_US
dc.titleEffect of growth temperature and RF power on structural and optical properties of sputtered deposited PbS thin filmsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.57(10) [October 2019]

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