Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/51116
Title: Effect of growth temperature and RF power on structural and optical properties of sputtered deposited PbS thin films
Authors: Gaur, Jyotshana
Sharma, Hitesh Kumar
Sharma, Sanjeev K
Singh, Beer Pal
Keywords: PbS thin films;Growth temperature and RF-power;Structural;Optical properties
Issue Date: Oct-2019
Publisher: NISCAIR-CSIR, India
Abstract: Lead sulphide (PbS) nanocrystalline thin films have been grown from sputtering with the variation of growth temperature and RF-Power. The intensity of single dominant peak (200) in XRD-pattern increases by increasing the growth temperature from 175 oC to 200 oC and RF power from 80 W to 100 W, respectively. The crystallite size and the strain of as-deposited PbS thin films have been calculated from XRD-peak profile analysis. Microscopic surface and cross-section images show the improvement in thin films growth in terms of alignment of grains and thickness. The band gap of PbS thin films has been determined from UV-Vis absorption spectra, where the band gap decreases from 1.98 eV to 1.72 eV as the growth temperature and power increased from 175 °C and 80 W to 200 °C and 100 W.
Page(s): 709-712
URI: http://nopr.niscair.res.in/handle/123456789/51116
ISSN: 0975-0959 (Online); 0301-1208 (Print)
Appears in Collections:IJPAP Vol.57(10) [October 2019]

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