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IJPAP Vol.46 [2008] >
IJPAP Vol.46(01) [January 2008] >
| Title: | Role of Cu additive in the density of localized states in a-Ge₂₀Se₈₀ glassy alloy |
| Authors: | Singh, R
Tripathi, S K
Kumar, S |
| Keywords: | Thin films
Chalcogenide glasses
Space charge limited conduction
Density of defect states |
| Issue Date: | Jan-2008 |
| Publisher: | CSIR |
| Abstract: | The dc conductivity at high electric fields in vacuum evaporated amorphous thin films of Ge₂₀Se₈₀ and (Ge₂₀Se₈₀)₉₈Cu₂ glassy alloys has been measured. Current-voltage (I-V) characteristics have been measured at various fixed temperatures. In these samples, ohmic behaviour is observed at low electric fields. However, at high electric fields (E~10⁴V/cm), non ohmic behaviour is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near Fermi level has been calculated. An increase in DOS has been found when we incorporate Cu in the pure binary Ge₂₀Se₈₀ glassy system. The peculiar role of Cu as a third element in the binary Ge₂₀Se₈₀ glassy alloy is also discussed. |
| Page(s): | 38-41 |
| ISSN: | 0019-5596 |
| Source: | IJPAP Vol.46(01) [January 2008]
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