Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/509
Title: Role of Cu additive in the density of localized states in a-Ge₂₀Se₈₀ glassy alloy
Authors: Singh, R
Tripathi, S K
Kumar, S
Keywords: Thin films;Chalcogenide glasses;Space charge limited conduction;Density of defect states
Issue Date: Jan-2008
Publisher: CSIR
Abstract: The dc conductivity at high electric fields in vacuum evaporated amorphous thin films of Ge₂₀Se₈₀ and (Ge₂₀Se₈₀)₉₈Cu₂ glassy alloys has been measured. Current-voltage (I-V) characteristics have been measured at various fixed temperatures. In these samples, ohmic behaviour is observed at low electric fields. However, at high electric fields (E~10⁴V/cm), non ohmic behaviour is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy materials studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near Fermi level has been calculated. An increase in DOS has been found when we incorporate Cu in the pure binary Ge₂₀Se₈₀ glassy system. The peculiar role of Cu as a third element in the binary Ge₂₀Se₈₀ glassy alloy is also discussed.
Page(s): 38-41
URI: http://hdl.handle.net/123456789/509
ISSN: 0019-5596
Appears in Collections:IJPAP Vol.46(01) [January 2008]

Files in This Item:
File Description SizeFormat 
IJPAP 46(1) (2008) 38-41.pdf133.31 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.