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|Title:||Effect of substrate-epitaxy interface doping profile on the series resistance and mm wave performance of Si IMPATT diode|
|Keywords:||Substrate-epitaxy interface;Series resistance;IMPATT diode|
|Abstract:||The effect of abrupt and exponential type of doping profiles in the transition region of epitaxy-substrate interfaces (nn⁺⁺ and pp⁺⁺) on the parasitic resistance and mm wave properties of double drift region low-high-low (n⁺⁺nn⁺npp⁺pp⁺⁺) Si IMPATT diode suitable for 35 GHz window frequency have been simulated. The results show that the negligible width of the nn⁺⁺(0.016 μm) and pp⁺⁺ (0.015 μm) substrate-epitaxy interface regions over the total depletion layer width of 2.0 μm with realistic exponential doping gradient rather than its hypothetical abrupt nature, severely degrade the maximum avalanche region breakdown field at the junction, negative resistance, negative conductance as well as the power conversion efficiency; in other way increasing simultaneously the value of drift region electric field, punch through condition and the series resistance of the diode.|
|Appears in Collections:||IJPAP Vol.46(01) [January 2008]|
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|IJPAP 46(1) (2008) 33-37.pdf||203.97 kB||Adobe PDF||View/Open|
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