NISCAIR Online Periodicals Repository

NISCAIR ONLINE PERIODICALS REPOSITORY (NOPR)  >
NISCAIR PUBLICATIONS >
Research Journals >
Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.46 [2008] >
IJPAP Vol.46(01) [January 2008] >


Title: Effect of substrate-epitaxy interface doping profile on the series resistance and mm wave performance of Si IMPATT diode
Authors: De, P
Keywords: Substrate-epitaxy interface
Series resistance
IMPATT diode
Issue Date: Jan-2008
Publisher: CSIR
Abstract: The effect of abrupt and exponential type of doping profiles in the transition region of epitaxy-substrate interfaces (nn⁺⁺ and pp⁺⁺) on the parasitic resistance and mm wave properties of double drift region low-high-low (n⁺⁺nn⁺npp⁺pp⁺⁺) Si IMPATT diode suitable for 35 GHz window frequency have been simulated. The results show that the negligible width of the nn⁺⁺(0.016 μm) and pp⁺⁺ (0.015 μm) substrate-epitaxy interface regions over the total depletion layer width of 2.0 μm with realistic exponential doping gradient rather than its hypothetical abrupt nature, severely degrade the maximum avalanche region breakdown field at the junction, negative resistance, negative conductance as well as the power conversion efficiency; in other way increasing simultaneously the value of drift region electric field, punch through condition and the series resistance of the diode.
Page(s): 33-37
ISSN: 0019-5596
Source:IJPAP Vol.46(01) [January 2008]

Files in This Item:

File Description SizeFormat
IJPAP 46(1) (2008) 33-37.pdf203.97 kBAdobe PDFView/Open
 Current Page Visits: 505 
Recommend this item

 

National Knowledge Resources Consortium |  NISCAIR Website |  Contact us |  Feedback

Disclaimer: NISCAIR assumes no responsibility for the statements and opinions advanced by contributors. The editorial staff in its work of examining papers received for publication is helped, in an honorary capacity, by many distinguished engineers and scientists.

CC License Except where otherwise noted, the Articles on this site are licensed under Creative Commons License: CC Attribution-Noncommercial-No Derivative Works 2.5 India

Copyright © 2012 The Council of Scientific and Industrial Research, New Delhi. All rights reserved.

Powered by DSpace Copyright © 2002-2007 MIT and Hewlett-Packard | Compliant to OAI-PMH V 2.0

Home Page Total Visits: 624890 since 06-Feb-2009  Last updated on 28-Nov-2014Webmaster: nopr@niscair.res.in