Please use this identifier to cite or link to this item:
Title: Effect of substrate-epitaxy interface doping profile on the series resistance and mm wave performance of Si IMPATT diode
Authors: De, P
Keywords: Substrate-epitaxy interface
Series resistance
IMPATT diode
Issue Date: Jan-2008
Publisher: CSIR
Abstract: The effect of abrupt and exponential type of doping profiles in the transition region of epitaxy-substrate interfaces (nn⁺⁺ and pp⁺⁺) on the parasitic resistance and mm wave properties of double drift region low-high-low (n⁺⁺nn⁺npp⁺pp⁺⁺) Si IMPATT diode suitable for 35 GHz window frequency have been simulated. The results show that the negligible width of the nn⁺⁺(0.016 μm) and pp⁺⁺ (0.015 μm) substrate-epitaxy interface regions over the total depletion layer width of 2.0 μm with realistic exponential doping gradient rather than its hypothetical abrupt nature, severely degrade the maximum avalanche region breakdown field at the junction, negative resistance, negative conductance as well as the power conversion efficiency; in other way increasing simultaneously the value of drift region electric field, punch through condition and the series resistance of the diode.
Description: 33-37
ISSN: 0019-5596
Appears in Collections:IJPAP Vol.46(01) [January 2008]

Files in This Item:
File Description SizeFormat 
IJPAP 46(1) (2008) 33-37.pdf203.97 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.