06-Mar-2015
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NISCAIR ONLINE PERIODICALS REPOSITORY (NOPR) >
NISCAIR PUBLICATIONS >
Research Journals >
Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.47 [2009] >
IJPAP Vol.47(07) [July 2009] >
| Title: | Automated measurements of junction characteristics to evaluate parameters for semiconductor diodes |
| Authors: | Patel, P K
Kheraj, V A
Panchal, C J
Desai, M S
Vakil, P D
Patel, K J |
| Keywords: | Semiconductor diode junction characteristics
LabVIEW automation |
| Issue Date: | Jul-2009 |
| Publisher: | CSIR |
| Abstract: | Using National Instrument’s LabVIEW (Laboratory Virtual Instrument Engineering Workbench), a graphical programming language, we have measured the junction characteristics of different diodes in the temperature range 273-373 K. The PCI-6024E Data Acquisition Board and BNC-2120 for the acquisition of the data have been used. LabVIEW’s Controls and Functions enable one to control the experiment, measure the parameters, analyze and process the data. Ideality factor  , reverse saturation current I0, and material constant B have been evaluated using I-V characteristics. The barrier height  B and the band-gap energy EG, have been measured and compared using both I-V and C-V characteristics. For Schottky diode, the series resistance RS, and B can be calculated using the Norde method. The band-gap energy has been measured using constant current source. Here, we have characterized p-n junction diodes viz. 1N5402, 1N5408, 1N4148, and 6A4. In addition, LabVIEW may be used to characterize other junction diodes like zener diode, LED, varactor diode, Schottky diode, etc. |
| Page(s): | 517-522 |
| ISSN: | 0975-1041 (Online); 0019-5596 (Print) |
| Source: | IJPAP Vol.47(07) [July 2009]
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