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|Title:||A new technique to measure flat band potential and barrier height at a desired surface charge of n- and p-semiconductors|
Prasad, B M
|Abstract:||A new technique to measure surface conductivity has been developed. This technique which can be used with either a thin film or a pellet can also provide information on (i) flat-band potential at a desired pH, (ii) barrier height developed at the interface of semiconductor-electrolyte at any desired pH and (iii) flat-band potential at a desired surface charge present at the semiconductor. A model has been developed to explain the mechanism of surface conductivity of a semiconductor, such as ɑ-Fe2O3 or n-SnS or p-SnSe.|
|Appears in Collections:||IJC-A Vol.28A(11) [November 1989]|
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