Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/46877
Title: A new technique to measure flat band potential and barrier height at a desired surface charge of n- and p-semiconductors
Authors: Sharon, Maheshwar
Prasad, B M
Basavaswaran, K
Issue Date: Nov-1989
Publisher: NISCAIR-CSIR, India
Abstract: A new technique to measure surface conductivity has been developed. This technique which can be used with either a thin film or a pellet can also provide information on (i) flat-band potential at a desired pH, (ii) barrier height developed at the interface of semiconductor-electrolyte at any desired pH and (iii) flat-band potential at a desired surface charge present at the semiconductor. A model has been developed to explain the mechanism of surface conductivity of a semiconductor, such as ɑ-Fe2O3 or n-SnS or p-SnSe.
Page(s): 935-941
URI: http://nopr.niscair.res.in/handle/123456789/46877
ISSN: 0975-0975(Online); 0376-4710(Print)
Appears in Collections:IJC-A Vol.28A(11) [November 1989]

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