Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/44847
Title: Comparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistors
Authors: Pradeep, T M
Hegde, Vinayakprasanna N
Pushpa, N
Bhushan, K G
Prakash, A P Gnana
Keywords: Bipolar junction transistor;Proton irradiation;Electron irradiation;Excess base current;Current gain
Issue Date: Aug-2018
Publisher: NISCAIR-CSIR, India
Abstract: The total dose effects of 5 MeV protons and 1 MeV electrons on the dc electrical characteristics of silicon NPN transistors have been investigated in the dose range from 1 Mrad(Si) to 100 Mrad(Si). The different electrical characteristics such as Gummel characteristics, excess base current (IB), dc current gain (hFE), transconductance (gm) and output characteristics have been studied in situ as a function of total dose. A considerable increase in base current (IB) and a decrease in hFE, gm and ICSat have been observed after 5 MeV proton and 1 MeV electron irradiation. The results show that there is more degradation in the I-V characteristics of 5 MeV proton irradiated devices when compared to 1 MeV electron irradiation. The degradation in the observed electrical characteristics of the transistors is mainly due to generation-recombination (G-R) centers created in emitter–base (E-B) spacer oxide (SiO2) and displacement damage in the bulk of the transistor structure. In addition to G-R centers, high energy protons can also create various types of defects in the transistor structure.
Page(s): 646-649
URI: http://nopr.niscair.res.in/handle/123456789/44847
ISSN: 0975-0959 (Online); 0301-1208 (Print)
Appears in Collections:IJPAP Vol.56(08) [August 2018]

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