Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/40420
Title: Deposition of boron nitride using a III-V precursor-1,3,5- isopropylborazine
Authors: Devi, G Sarala
Issue Date: Feb-1994
Publisher: NISCAIR-CSIR, India
Abstract: The synthesis of 1,3,5-isopropylborazine is described with key steps involving the reaction of isopropyl amine hydrogen chloride with lithium borohydride in THF. The compound has been characterized by IR, 1NMR and mass spectral studies. Films of BN have been deposited on silicon(Si) substrates by MO-CVD and are characterized by X-ray diffraction (XRD), and IR spectroscopy which reveals the presence of SP3 and SP2 phases of BN.
Page(s): 168-169
URI: http://nopr.niscair.res.in/handle/123456789/40420
ISSN: 0975-0975(Online); 0376-4710(Print)
Appears in Collections:IJC-A Vol.33A(02) [February 1994]

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