Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/3435
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dc.contributor.authorAli, Yousuf P-
dc.contributor.authorNair, Geeta-
dc.contributor.authorNarsale, A M-
dc.contributor.authorChandrasekaran, K S-
dc.contributor.authorArora, B M-
dc.date.accessioned2009-03-23T07:14:03Z-
dc.date.available2009-03-23T07:14:03Z-
dc.date.issued2009-
dc.identifier.issn0019-5596-
dc.identifier.urihttp://hdl.handle.net/123456789/3435-
dc.description170-174en_US
dc.description.abstractSingle crystal GaAs substrates implanted with 70 MeV 120Sn have been investigated by X-ray diffraction (XRD) and electrical resistance measurements after annealing in the temperature range 373-823 K. XRD measurements for the samples annealed up to 723 K show two peaks, one due to the substrate and another due to the implant damaged layer. The strain parameter from the measured separation between the substrate and layer peaks of several symmetric and asymmetric reflections after each annealing step has been calculated. Strain recovery occurs in two predominant annealing stages, one at about 500 K and the other at about 700 K. Temperature dependence (100-300 K) of resistance of these samples indicates that electrical conduction in the samples annealed up to 723 K, is dominated by variable range hopping. Localized states density at the Fermi level N(EF), estimated from temperature dependence of sample resistance after each annealing step, shows two annealing stages similar to those observed from XRD measurements. Isothermal annealing carried out at two different annealing temperatures (523 and 573 K) indicates the activation energy Ea = 0.16 eV for the first annealing stage.en_US
dc.language.isoen_USen_US
dc.publisherCSIRen_US
dc.sourceIJPAP Vol.47(03) [March 2009]en_US
dc.subjectMeV implantationen_US
dc.subjectRadiation defectsen_US
dc.subjectGaAsen_US
dc.titleAnnealing behaviour of GaAs implanted with 70 MeV 120Sn ionsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.47(03) [March 2009]

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