Please use this identifier to cite or link to this item:
Title: Grain boundary scattering in silicon doped polycrystalline gallium nitride films prepared by rf sputtering
Authors: Bhattacharyya, S R
Pal, A K
Keywords: Group III nitrides
Grain boundary
X-ray photoelectron spectroscopy
Issue Date: Feb-2009
Publisher: CSIR
Abstract: Silicon doped polycrystalline gallium nitride films have been deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency sputtering technique. The films are characterized by optical measurements while the microstructural information is obtained from scanning electron microscopy and atomic force microscopy. X-ray photoelectron spectroscopy studies indicate compositional information in these films. The bonding environment in the film has been revealed from Fourier transformed infrared studies. Grain boundary parameters like density of trap states and barrier height are also evaluated.
Description: 125-133
ISSN: 0019-5596
Appears in Collections:IJPAP Vol.47(02) [February 2009]

Files in This Item:
File Description SizeFormat 
IJPAP 47(2) 125-133.pdf1.38 MBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.