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|Title:||Grain boundary scattering in silicon doped polycrystalline gallium nitride films prepared by rf sputtering|
|Authors:||Bhattacharyya, S R|
Pal, A K
|Keywords:||Group III nitrides;Grain boundary;X-ray photoelectron spectroscopy;FTIR|
|Abstract:||Silicon doped polycrystalline gallium nitride films have been deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency sputtering technique. The films are characterized by optical measurements while the microstructural information is obtained from scanning electron microscopy and atomic force microscopy. X-ray photoelectron spectroscopy studies indicate compositional information in these films. The bonding environment in the film has been revealed from Fourier transformed infrared studies. Grain boundary parameters like density of trap states and barrier height are also evaluated.|
|Appears in Collections:||IJPAP Vol.47(02) [February 2009]|
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