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IJPAP Vol.47(02) [February 2009] >


Title: Grain boundary scattering in silicon doped polycrystalline gallium nitride films prepared by rf sputtering
Authors: Bhattacharyya, S R
Pal, A K
Keywords: Group III nitrides
Grain boundary
X-ray photoelectron spectroscopy
FTIR
Issue Date: Feb-2009
Publisher: CSIR
Abstract: Silicon doped polycrystalline gallium nitride films have been deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency sputtering technique. The films are characterized by optical measurements while the microstructural information is obtained from scanning electron microscopy and atomic force microscopy. X-ray photoelectron spectroscopy studies indicate compositional information in these films. The bonding environment in the film has been revealed from Fourier transformed infrared studies. Grain boundary parameters like density of trap states and barrier height are also evaluated.
Page(s): 125-133
ISSN: 0019-5596
Source:IJPAP Vol.47(02) [February 2009]

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