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Title: | Characterization of bias magnetron sputtered tantalum oxide films for capacitors |
Authors: | Chandrasekhar, M Chandra, S V Jagadeesh Uthanna, S |
Keywords: | Tantalum oxide;Magnetron sputtering;Structure;Dielectric properties |
Issue Date: | Jan-2009 |
Publisher: | CSIR |
Abstract: | Tantalum oxide films have been deposited by sputtering of tantalum target in an oxygen partial pressure of 2x10⁻⁴ mbar under various substrate bias voltages in the range from 0 to -150 V on glass and silicon substrates held at room temperature. The influence of substrate bias voltage on the chemical binding configuration, crystallographic structure, electrical and dielectric properties has been systematically studied. The X-ray photoelectron spectroscopic studies reveal that the films are stoichiometric. The X-ray diffraction and Fourier transform infrared spectroscopic studies indicate that the films deposited under unbiased condition are amorphous in nature, whereas those formed at substrate bias voltages ≥ -75 V are polycrystalline with orthorhombic β-phase. The electrical and dielectric properties of Ta₂O₅ films have been studied on the metal / insulator / metal (MIM) structure of Al/ Ta₂O₅/Al. The dielectric constant of the films formed at unbiased condition has been found to be 15, while for those prepared at higher substrate bias voltage of -150 V has been found to be 23 due to the improvement in the crystallinity and packing density. The voltage - current measurements on the MIM structure indicate the decrease of leakage current density with the increase of substrate bias voltage. |
Page(s): | 49-53 |
URI: | http://hdl.handle.net/123456789/3135 |
ISSN: | 0019-5596 |
Appears in Collections: | IJPAP Vol.47(01) [January 2009] |
Files in This Item:
File | Description | Size | Format | |
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IJPAP 47(1) 49-53.pdf | 370.35 kB | Adobe PDF | View/Open |
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