Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/3135
Title: Characterization of bias magnetron sputtered tantalum oxide films for capacitors
Authors: Chandrasekhar, M
Chandra, S V Jagadeesh
Uthanna, S
Keywords: Tantalum oxide
Magnetron sputtering
Structure
Dielectric properties
Issue Date: Jan-2009
Publisher: CSIR
Abstract: Tantalum oxide films have been deposited by sputtering of tantalum target in an oxygen partial pressure of 2x10⁻⁴ mbar under various substrate bias voltages in the range from 0 to -150 V on glass and silicon substrates held at room temperature. The influence of substrate bias voltage on the chemical binding configuration, crystallographic structure, electrical and dielectric properties has been systematically studied. The X-ray photoelectron spectroscopic studies reveal that the films are stoichiometric. The X-ray diffraction and Fourier transform infrared spectroscopic studies indicate that the films deposited under unbiased condition are amorphous in nature, whereas those formed at substrate bias voltages ≥ -75 V are polycrystalline with orthorhombic β-phase. The electrical and dielectric properties of Ta₂O₅ films have been studied on the metal / insulator / metal (MIM) structure of Al/ Ta₂O₅/Al. The dielectric constant of the films formed at unbiased condition has been found to be 15, while for those prepared at higher substrate bias voltage of -150 V has been found to be 23 due to the improvement in the crystallinity and packing density. The voltage - current measurements on the MIM structure indicate the decrease of leakage current density with the increase of substrate bias voltage.
Description: 49-53
URI: http://hdl.handle.net/123456789/3135
ISSN: 0019-5596
Appears in Collections:IJPAP Vol.47(01) [January 2009]

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