Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/30637
Title: Effect of substrate temperature on properties of spray deposited semiconducting Cdln2S4 thin films
Authors: Sawant, R R
Bhosale, C H
Keywords: Spray pyrolysis;Cdln2S4 thin films;XRD;EDAX;Optical and electrical properties
Issue Date: Oct-2006
Publisher: NISCAIR-CSIR, India
IPC Code: C23C 016/30
Abstract: Spray pyrolysis is one of the most convenient, economical, inexpensive and simple methods for depositing large area semiconducting thin films. Semiconducting Cdln2S4 thin films have been deposited onto the amorphous and FTO coated glass substrates by varying substrate temperatures from 300, at the interval of 25 to 375°C. The optimized deposition temperature is around 350°C. The films have been characterized for their crystalline structure, photoelectrochemical (PEC) studies, energy dispersive analysis by X-rays (EDAX), optical and electrical transport properties by means of X-ray diffraction and thermoelectric power (TEP) measurement techniques. The cubic nature of Cdln2S4 thin films has been confirmed from XRD analysis. The PEC characterization shows that both short circuit current (Isc) and open circuit voltage (Voc) are at their optimum values at the optimized substrate temperature of 350°C and solution concentration of 0.05M. EDAX studies show that the material formed at optimized preparative parameters is almost stoichiometric. The optical absorption study reveals that Cdln2S4, is indirect band gap material having band gap energy equal to 2.22 eV, matching with single crystal value. Semiconducting nature of the films is observed from the two-probe resistivity measurement. From TEP measurement, the material has been found to exhibit n-type conductivity.
Page(s): 741-745
URI: http://hdl.handle.net/123456789/30637
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.44(10) [October 2006]

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