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|Title:||Growth of ZnSe single crystals by CVT technique and study micromorphology|
|Authors:||Tafreshi, M J|
|Keywords:||Semiconductors;Crystal growth;Optical microscopy;Crystal Structure|
|Abstract:||The vapour phase chemical transport in a closed tube has been investigated for a ZnSe-I2 system. Based on a proposed thermodynamic model, the optimum condition for the growth of ZnSe single crystals is determined. A good agreement has been observed between the predicted optimum growth parameters and the experimental results. ZnSe single crystals are grown at different temperatures including optimum temperature for 2.5 mg/cm3 of iodine concentration. ZnSe single crystals grown at optimum temperature show better structural and morphological properties as compared to other temperature range.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.46(09) [September 2008]|
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