Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/30425
Title: Growth of ZnSe single crystals by CVT technique and study micromorphology
Authors: Tafreshi, M J
FazIi, M
Keywords: Semiconductors;Crystal growth;Optical microscopy;Crystal Structure
Issue Date: Sep-2008
Publisher: NISCAIR-CSIR, India
Abstract: The vapour phase chemical transport in a closed tube has been investigated for a ZnSe-I2 system. Based on a proposed thermodynamic model, the optimum condition for the growth of ZnSe single crystals is determined. A good agreement has been observed between the predicted optimum growth parameters and the experimental results. ZnSe single crystals are grown at different temperatures including optimum temperature for 2.5 mg/cm3 of iodine concentration. ZnSe single crystals grown at optimum temperature show better structural and morphological properties as compared to other temperature range.
Page(s): 646-650
URI: http://hdl.handle.net/123456789/30425
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.46(09) [September 2008]

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