Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/29733
Title: Study of compositional and diffusion effect in CdxZn1-xS sintered films
Authors: Singh, V
Kumar, Vipin
Issue Date: Aug-1997
Publisher: NISCAIR-CSIR, India
Abstract: H-VI Semiconductors are of great importance due to their applications in various electro-optic devices. CdS is a suitable window material for CdS/CdTe and CdS/Cu2S heterojunction solar cells. ZnS with band gap 3.54 eV can be substituted into CdS to increase the band gap of window material. The use of CdxZn1-xS in place of Cd permits a greater open circuit voltage. On preparation of the sintered film of CdXZn1-XS, the problem of diffusion arises, which disturbs the stoichiometry of the film. Here, methods have been suggested to preserve stoichiometry and minimize the diffusion problem in preparation of sintered films.
Page(s): 163-165
URI: http://hdl.handle.net/123456789/29733
ISSN: 0975-1017 (Online); 0971-4588 (Print)
Appears in Collections:IJEMS Vol.04(4) [August 1997]

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