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|Title:||Study of compositional and diffusion effect in CdxZn1-xS sintered films|
|Abstract:||H-VI Semiconductors are of great importance due to their applications in various electro-optic devices. CdS is a suitable window material for CdS/CdTe and CdS/Cu2S heterojunction solar cells. ZnS with band gap 3.54 eV can be substituted into CdS to increase the band gap of window material. The use of CdxZn1-xS in place of Cd permits a greater open circuit voltage. On preparation of the sintered film of CdXZn1-XS, the problem of diffusion arises, which disturbs the stoichiometry of the film. Here, methods have been suggested to preserve stoichiometry and minimize the diffusion problem in preparation of sintered films.|
|ISSN:||0975-1017 (Online); 0971-4588 (Print)|
|Appears in Collections:||IJEMS Vol.04(4) [August 1997]|
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