Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/29725
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dc.contributor.authorBalasubramaniam, T-
dc.contributor.authorNarayandass, Sa K-
dc.contributor.authorMangalaraj, D-
dc.date.accessioned2014-11-05T10:13:33Z-
dc.date.available2014-11-05T10:13:33Z-
dc.date.issued1997-06-
dc.identifier.issn0975-1017 (Online); 0971-4588 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/29725-
dc.description112-116en_US
dc.description.abstractPreparation and the study of optical and transport properties on Se0.7Te0.3 and Se0.3Te0.7in the form of vacuum deposited thin films are undertaken. Material preparation consists of two processes, i.e., (i) preparation of bulk selenium telluride alloys and (ii) fabrication of thin films for characterizing the above mentioned properties. The thicknesses of various films have been measured by multiple beam interference technique. Rutherford Backscattering Spectrometry (RBS) analyses clearly indicate the presence of the parental elements in two different compositions. The XRD studies revealed the polycrystalline nature of the Se0.7Te0.3 and Se0.3Te0.7 thin films. Optical constants in the 500-2500 nm region, band gap and the transition type have been determined from the transmission data. Hall and thermopower measurements are made on these two different compositions and the Hall parameters are calculated.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJEMS Vol.04(3) [June 1997]en_US
dc.titleOptical and transport properties of Se0.7Te0.3 and Se0.3 Te0.7 alloy thin filmsen_US
dc.typeArticleen_US
Appears in Collections:IJEMS Vol.04(3) [June 1997]

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