Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/28698
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dc.contributor.authorSharma, Sanjeev K-
dc.contributor.authorIm, Hyunsik-
dc.contributor.authorKim, Deuk Young-
dc.contributor.authorMehra, R M-
dc.date.accessioned2014-04-30T10:40:20Z-
dc.date.available2014-04-30T10:40:20Z-
dc.date.issued2014-05-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/28698-
dc.description293-313en_US
dc.description.abstractHydrogenated amorphous silicon thin films manufactured by plasma deposition techniques are widely used in electronic and optoelectronic devices. The optical and electrical properties of undoped and doped hydrogenated amorphous silicon (a-Si:H) thin films determine the importance and characteristics of the final film structure of practical devices. In particular, a-Si:H thin film solar cells and optical sensors have many industrial and technical advantages, such as being light weight, low cost, and having a large deposition area. The a-Si:H thin film is one of the candidates for flexible solar cells for use in space. This article reviews the optical and electrical properties of double donor Se-and S-doped a-Si:H thin films, which can be considered as an alternative to wide bandgap absorbing layers in the next generation of optoelectronic devices.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.52(05) [May 2014]en_US
dc.subjectHydrogenated amorphous siliconen_US
dc.subjectDouble donoren_US
dc.subjectOptical propertiesen_US
dc.subjectElectrical propertiesen_US
dc.subjectConduction mechanismen_US
dc.titleReview on Se-and S-doped hydrogenated amorphous silicon thin filmsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.52(05) [May 2014]

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