Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/28698
Title: Review on Se-and S-doped hydrogenated amorphous silicon thin films
Authors: Sharma, Sanjeev K
Im, Hyunsik
Kim, Deuk Young
Mehra, R M
Keywords: Hydrogenated amorphous silicon;Double donor;Optical properties;Electrical properties;Conduction mechanism
Issue Date: May-2014
Publisher: NISCAIR-CSIR, India
Abstract: Hydrogenated amorphous silicon thin films manufactured by plasma deposition techniques are widely used in electronic and optoelectronic devices. The optical and electrical properties of undoped and doped hydrogenated amorphous silicon (a-Si:H) thin films determine the importance and characteristics of the final film structure of practical devices. In particular, a-Si:H thin film solar cells and optical sensors have many industrial and technical advantages, such as being light weight, low cost, and having a large deposition area. The a-Si:H thin film is one of the candidates for flexible solar cells for use in space. This article reviews the optical and electrical properties of double donor Se-and S-doped a-Si:H thin films, which can be considered as an alternative to wide bandgap absorbing layers in the next generation of optoelectronic devices.
Page(s): 293-313
URI: http://hdl.handle.net/123456789/28698
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.52(05) [May 2014]

Files in This Item:
File Description SizeFormat 
IJPAP 52(5) 293-313.pdf721.85 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.