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|Title:||Growth and characterization of In-Sb thin film structure|
|Authors:||Mangal, R K|
Vijay, Y K
|Keywords:||InSb;X-ray diffraction;Rapid thermal annealed;Thin films;Optical band gap|
|Abstract:||Thin films of InSb have been obtained by resistive heating method at the pressure 10⁻⁵ torr. Mixing of these bilayers has been done by rapid thermal annealing as well as vacuum annealing process. Characterizations of these films have carried out by optical band gap, Rutherford backscattering and X-ray diffraction studies. Obtained results indicate formation of InSb semiconductor.|
|Appears in Collections:||IJPAP Vol.45(12) [December 2007]|
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