Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/2724
Title: Growth and characterization of In-Sb thin film structure
Authors: Mangal, R K
Tripathi, B
Singh, M
Vijay, Y K
Rais, A
Keywords: InSb
X-ray diffraction
Rapid thermal annealed
Thin films
Optical band gap
Issue Date: Dec-2007
Publisher: CSIR
Series/Report no.: C30B
Abstract: Thin films of InSb have been obtained by resistive heating method at the pressure 10⁻⁵ torr. Mixing of these bilayers has been done by rapid thermal annealing as well as vacuum annealing process. Characterizations of these films have carried out by optical band gap, Rutherford backscattering and X-ray diffraction studies. Obtained results indicate formation of InSb semiconductor.
Description: 987-990
URI: http://hdl.handle.net/123456789/2724
ISSN: 0019-5596
Appears in Collections:IJPAP Vol.45(12) [December 2007]

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