Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/27221
Title: Thermal crystallization behaviour of Ge-Te-Se glasses
Authors: Acharya, K V
Asokan, S
Panchapagesan, T S
Issue Date: Nov-1999
Publisher: NISCAIR-CSIR, India
Abstract: Ge10Te90-xSex (50 ≤ x ≤ 70) and Ge20Te80-xSex (x = 30, 50) glasses have been prepared by melt-quenching. The thermal crystallization behaviour of these samples has been studied by Differential Scanning Calorimetry (DSC), in order to characterise these glasses for memory-threshold switching applications. It is found that Ge10Te90-xSex glasses have higher thermal stability and are more stable against devitrification. These samples may be suitable for threshold switching devices. Ge20Te80-xSex glasses, on the other hand, phase separate on heating and exhibit a double stage crystallization. Based on this, it can be expected that Ge20Te80-xSex samples will show memory behaviour. The activation energy for thermal crystallization of a representative Ge10Te40Se50 glass belonging to the Ge10Te90-xSex series has been found by the Kissinger's method to be 0.92 eV. The value of the activation energy obtained also indicates that Ge10Te90-xSex samples are less prone to devitrification and more suitable for threshold behaviour.
Page(s): 823-827
URI: http://hdl.handle.net/123456789/27221
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.37(11) [November 1999]

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