Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/27215
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dc.contributor.authorJayavel, P-
dc.contributor.authorKumar, J-
dc.contributor.authorGhosh, S-
dc.contributor.authorAvasthi, D K-
dc.contributor.authorJhingan, A-
dc.contributor.authorSugathan, P-
dc.contributor.authorAsokan, K-
dc.date.accessioned2014-02-28T04:51:27Z-
dc.date.available2014-02-28T04:51:27Z-
dc.date.issued1999-10-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/27215-
dc.description774-777en_US
dc.description.abstractLiquid Encapsulated Czochralski (LEC) grown Fe doped indium phosphide (InP) surface barrier detector of thickness 350μm has been fabricated and electrical characteristics have been analysed. The detector has been evaluated at room temperature using 57Co (122 keV) and 137Cs (662 keV) gamma sources and obtained energy resolution of 20 keV and 112 keV at FWHM.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.37(10) [October 1999]en_US
dc.titleEvaluation of indium phosphide surface barrier detector using gamma raysen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.37(10) [October 1999]

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