Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/27093
Title: Thickness dependence of dielectric constant in barium strontium titanate thin films
Authors: Panda, B
Nigam, G D
Ray, S K
Issue Date: Apr-1999
Publisher: NISCAIR-CSIR, India
Abstract: Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon Si/SiO2/Ti/TiN/Pt substrate. The structural and electrical properties have been investigated using X-ray diffraction and capacitance-voltage characteristics of fabricated capacitors. The growth and orientation of the film have been found to depend upon the type of substrates and deposition temperatures. The effective dielectric constant of BST film in Si/SiO2/Ti/TiN/Pt/BST/Al thin film capacitor is found to increase with the increasing thickness of the film. A space charge layer with low dielectric constant is found to form at the film electrode interface.
Page(s): 318-320
URI: http://hdl.handle.net/123456789/27093
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.37(04) [April 1999]

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