Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/27074
Title: Preparntion and characterization of chemically deposited As2S3 thin films
Authors: Mane, R S
Lokhande, B J
Uplane, M D
Lokhande, C D
Issue Date: Mar-1999
Publisher: NISCAIR-CSIR, India
Abstract: A method for chemical bath deposition of As2S3 thin films in an aqueous acidic medium is described. As2O3, was used as As3+ ion source and thioacetamide as a S2- ion source. Sodium salt of ethylene diamine tetracetic acid was used as a complexing agent for As2O3. The preparative parameters like solution concentration, volume of sulphur ion source etc. have been optimized. X-ray diffraction, SEM, optical absorption, electrical resistivity, etc. are used to characterize the films.
Page(s): 196-198
URI: http://hdl.handle.net/123456789/27074
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.37(03) [March 1999]

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