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dc.contributor.authorRout, S K-
dc.contributor.authorBadapanda, T-
dc.contributor.authorPanigrahi, S-
dc.date.accessioned2008-12-26T06:36:41Z-
dc.date.available2008-12-26T06:36:41Z-
dc.date.issued2007-09-
dc.identifier.issn0019-5596-
dc.identifier.urihttp://hdl.handle.net/123456789/2671-
dc.description749-753en_US
dc.description.abstractBarium zirconium titanate thin films are attractive candidates for dynamic random access memories and tunable microwave devices. Barium zirconate titanate Ba(ZrxTi₁₋x) O₃ (BZT, y = 0.0, 0.2, 0.4) ceramics have been prepared by a sol-gel process. X-ray diffraction studies confirmed that the films of BZT are in crystalline form and of single phase. The SEM study shows that the films of homogeneous microstructure and Zr content strongly influence the grain size of the film. The grain size decreased and the microstructure became dense when Zr was substituted for Ti. The room temperature dielectric study shows that the permittivity as well as dielectric loss tangent decreases with increase in Zr content in the film. The ac conductivity was evaluated from dielectric data and was found to be decrease with increase in Zr concentration.en_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesG01R27/26en_US
dc.sourceIJPAP Vol.45(9) [September 2007]en_US
dc.subjectPerovskiteen_US
dc.subjectDielectricsen_US
dc.subjectThin filmen_US
dc.subjectBaTiO₃-BaZrO₃en_US
dc.subjectGrain sizeen_US
dc.titleDielectric study of spin coated nano-thick BaZrxTi₁₋xO₃ filmen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.45(09) [September 2007]

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