Please use this identifier to cite or link to this item:
Title: Deposition of cobalt sulphide thin films by successive ionic layer adsorption and reaction (SILAR) method and their characterization
Authors: Sartale, S D
Lokhande, C D
Issue Date: Jan-2000
Publisher: NISCAIR-CSIR, India
Abstract: Successive ionic layer adsorption and reaction (SILAR) method was used to deposit cobalt sulphide (CoS) thin films on amorphous glass and Si (III) wafer substrates in aqueous mediumĀ  using cobalt sulphate (CoSO4 ) solution as the cationic precursor and sodium sulphide (Na2S) solution as the anionic precursor. The conditions for the formation of good quantity films such as concentration pH and temperature of anionic and cationic precursor solutions, immersion and rinsing times and number of immersion were optimised. The structural, optimal and electrical properties of the films arc reported.
Page(s): 48-52
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.38(01) [January 2000]

Files in This Item:
File Description SizeFormat 
IJPAP 38(1) 48-52.pdf794.99 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.