Please use this identifier to cite or link to this item:
Title: Bi2(S1-x, Sex)3 thin film composites: synthesis and properties
Authors: Bhosale, P N
Deshmukh, L P
Patil, A R
Issue Date: Sep-2001
Publisher: NISCAIR-CSIR, India
Abstract: Chemical synthesis of the bismuth sulphoselenide Bi2(S1-x, Sex)3) composite thin films is presented in this paper for the first time. The composites were obtained onto the plane microscopic amorphous glasses by a simple electroless solution growth process. The different preparation conditions and parameters (temperature, time, solution composition and pH etc) were finalized in the initial stages of the work and the reaction kinetics and growth mechanism have been discussed in brief. The contents of Bi and Se in the bath and in the film were determined by the spectrophotometric and atomic absorption spectrophotometric techniques. The X-ray diffraction analysis showed that the composites are microcrystalline in nature and are mixed ternary chalcogens of the general formula Bi2(S1-x, Sex)3. The optical studies revealed that the films are highly absorptive with a band to band type transitions and the energy gap decreased, typically, from 1.9 eV for Bi2S3 to 0.97eV for Bi2Se3. The electrical conductivity and thermoelectric power measurements showed increase in the conductivity with increased Se-content (x) in the film and n-type conduction of the samples, respectively. The thermo power is of the order of μ V/K.
Page(s): 574-581
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.39(09) [September 2001]

Files in This Item:
File Description SizeFormat 
IJPAP 39(9) 574-581.pdf1.5 MBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.