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|Title:||Electrical properties of thermally evaporated doped and undoped films of CdSe|
|Authors:||Borah, M N|
Sarmah, P C
|Keywords:||Electrical properties;Activation energy;Schottky barrier;Cadmium selenide|
|Abstract:||Electrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky bar-rier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J-V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance.|
|Appears in Collections:||IJPAP Vol.45(08) [August 2007]|
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