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http://nopr.niscair.res.in/handle/123456789/2645
Title: | Electrical properties of thermally evaporated doped and undoped films of CdSe |
Authors: | Borah, M N Chaliha, S Sarmah, P C Rahman, A |
Keywords: | Electrical properties;Activation energy;Schottky barrier;Cadmium selenide |
Issue Date: | Aug-2007 |
Publisher: | CSIR |
IPC Code: | H0L |
Abstract: | Electrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky bar-rier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J-V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance. |
Page(s): | 687-691 |
URI: | http://hdl.handle.net/123456789/2645 |
ISSN: | 0019-5596 |
Appears in Collections: | IJPAP Vol.45(08) [August 2007] |
Files in This Item:
File | Description | Size | Format | |
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IJPAP 45(8) 687-691.pdf | 169.61 kB | Adobe PDF | View/Open |
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