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IJPAP Vol.45(08) [August 2007] >


Title: Electrical properties of thermally evaporated doped and undoped films of CdSe
Authors: Borah, M N
Chaliha, S
Sarmah, P C
Rahman, A
Keywords: Electrical properties
Activation energy
Schottky barrier
Cadmium selenide
Issue Date: Aug-2007
Publisher: CSIR
IPC CodeH0L
Abstract: Electrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky bar-rier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J-V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance.
Page(s): 687-691
ISSN: 0019-5596
Source:IJPAP Vol.45(08) [August 2007]

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