|
NISCAIR ONLINE PERIODICALS REPOSITORY (NOPR) >
NISCAIR PUBLICATIONS >
Research Journals >
Indian Journal of Pure & Applied Physics (IJPAP) >
IJPAP Vol.45 [2007] >
IJPAP Vol.45(08) [August 2007] >
| Title: | Electrical properties of thermally evaporated doped and undoped films of CdSe |
| Authors: | Borah, M N
Chaliha, S
Sarmah, P C
Rahman, A |
| Keywords: | Electrical properties
Activation energy
Schottky barrier
Cadmium selenide |
| Issue Date: | Aug-2007 |
| Publisher: | CSIR |
| IPC Code: | H0L |
| Abstract: | Electrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky bar-rier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J-V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance. |
| Page(s): | 687-691 |
| ISSN: | 0019-5596 |
| Source: | IJPAP Vol.45(08) [August 2007]
|
|
