Please use this identifier to cite or link to this item:
http://nopr.niscair.res.in/handle/123456789/2645| Title: | Electrical properties of thermally evaporated doped and undoped films of CdSe |
| Authors: | Borah, M N Chaliha, S Sarmah, P C Rahman, A |
| Keywords: | Electrical properties Activation energy Schottky barrier Cadmium selenide |
| Issue Date: | Aug-2007 |
| Publisher: | CSIR |
| Series/Report no.: | H0L |
| Abstract: | Electrical characteristics of Ag-doped and undoped films of CdSe have been reported. The activation energies at lower and elevated temperatures have been found to be 0.22 and 0.6eV, respectively. The Sn/CdSe junction exhibits Schottky bar-rier characteristics with diode ideality factor deviating from unity. Barrier height obtained from C-V plot and J-V plot are 0.8 and 0.72eV, respectively. The junction has been endowed with high series resistance. |
| Description: | 687-691 |
| URI: | http://hdl.handle.net/123456789/2645 |
| ISSN: | 0019-5596 |
| Appears in Collections: | IJPAP Vol.45(08) [August 2007] |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| IJPAP 45(8) 687-691.pdf | 169.61 kB | Adobe PDF | View/Open |
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