Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/26302
Title: Dependence of dopant ion selectivity on incorporation of proton in doped perovskite oxides
Authors: Kumar, Ashok
Issue Date: Apr-2001
Publisher: NISCAIR-CSIR, India
Abstract: The proton conductivity of doped perovskite metal oxides with ABO3 structure (where A = Ca2+, Ba2+, Sr2+: B = Zr4+, Ce4+) aliovalently doped with lanthanide oxides (Yb2O3, Nd2O3 etc.) can be understood in terms of effective oxide ion vacancy concentration arising from dopant site selectivity and relative values of water incorporation energies. The conductivity results suggest that smaller lanthanide ions (Y3+,Yb3+) substitute for B site cations (Zr4+) generating oxide ion vacancies (VO) necessary for proton incorporation as a result of charge compensation giving rise to enhanced proton conductivity. On the other hand larger lanthanide dopant ions (Nd3+, La3+) appear to substitute for A site cations (Sr2+) resulting in the generation of divalent cation vacancies. Such doping would suppress oxide ion vacancy concentration and the proton conductivity is decreased. The results are consistent with the energetics of substitution reactions.
Page(s): 263-266
URI: http://hdl.handle.net/123456789/26302
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.39(04) [April 2001]

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