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Title: Optical and transport properties of CdS1-x Tex alloyed thin films
Authors: Patil, V B
Sutrave, D S
Shahane, G S
Deshmukh, L P
Issue Date: Mar-2001
Publisher: NISCAIR-CSIR, India
Abstract: A good deal of information regarding synthesis optical and electrical transport properties of the chemically grown CdS1-x Tex thin film structures is presented. Growth of these films depend upon various preparative parameters and deposition conditions such as temperature, pH, time, concentration, speed of the mechanical churning etc and the reaction kinetics suggests that the films grow in two different phases; an initial quasi -linear and second a saturation. The as-deposited films are crystalline over the whole range of the composition parameter and both CdS and CdTe are deposited as a mixture of the hexagonal wurtzite and cubic zinc blende structures (hexagonal being dominant). The solid solution is observed for hexagonal phase in the 0≤x ≤0.1 and 0.9≤ x≤ 1 regions. In the middle range (0.1< x < 0.9), separate phases of both CdS and CdTe have been detected. Optical absorption studies revealed a high absorption coefficient (104-105 cm-1) with a direct type of transition. The estimated bandgap decreased almost linearly with the composition parameter, x. The room temperature electrical conductivity is found to be increased initially with the composition parameter (0≤x ≤0.1) decreased for a further increased in x (0.1 < x < 0.8) and again increased for higher Te content in CdS. The material exhibits both grain boundary scattering limited and a variable range hopping conduction mechanisms. The thermoelectric power is negative showing n-type behaviour of the samples. Both carrier concentration (n) and mobility (μ) were computed and found to be sensitive functions of temperature.
Page(s): 184-190
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.39(03) [March 2001]

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