Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/26185
Title: Design of microprocessor controlled RTA system for processing of ion implanted semiconductor materials
Authors: Belekar, M M
Narsale, A M
Sukhatankar, K V
Arora, B M
Ali, Y P
Issue Date: Aug-2002
Publisher: NISCAIR-CSIR, India
Abstract: Rapid thermal annealing (RTA) is one of the important techniques used for removal of radiation induced defects in ion implanted semiconductor materials. A complete stand-alone microprocessor controlled RTA system has been designed and fabricated. It uses a 12 kW halogen lamp bank for rapid radiative heating of the sample and provides good temperature ramp-up rate of > 120°C/s up to a temperature of 700°C. A gas line assembly has been provided to carry out the annealing in hydrogen, nitrogen, argon and oxygen gas ambient. The system temperature is programmable in the step of 1°C each up to the maximum attainable temperature of 1080oC. The soak time can be programmed from a minimum of 1 s up to a maximum of 15 min per set temperature. The system has been used for annealing of single crystal GaAs substrates implanted with 70 MeV 56Fe ions with a dose of 1×1014 ions/cm2, in the temperature range 100-600oC. The implanted samples have been investigated by optical transmission measurements over photon energy range 0.1-1.4 eV, after each annealing stage. The mid-gap defect states are annealed out more rapidly than the near-band edge defect states during annealing up to 350°C whereas, the near-band edge defect states are annealed out more rapidly than the mid-gap defect states during annealing between 350-600oC.
Page(s): 543-551
URI: http://hdl.handle.net/123456789/26185
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.40(08) [August 2002]

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