Please use this identifier to cite or link to this item:
Title: Optical band gap of In₀․₁Bi₁․₉Te₃ thin films
Authors: Soni, P H
Bhavsar, S R
Pandya, G R
Desai, C F
Keywords: Absorbance;Band gap;Film thickness;Size effect
Issue Date: Nov-2008
Publisher: CSIR
Abstract: Thin films (In₀․₁Bi₁․₉Te₃ ) were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500-4000 cm⁻¹. From the optical absorption data, the band gap has been evaluated and studied as a function of the film thickness and deposition temperature. The band gap increases with decreasing thickness, a result normally associated with quantum size effect. The deposition temperature does not seem to affect the band gap as indicated by the results. The data indicate absorption through direct interband transition with a band gap around 0.14 eV.
Page(s): 806-808
ISSN: 0019-5596
Appears in Collections:IJPAP Vol.46(11) [November 2008]

Files in This Item:
File Description SizeFormat 
IJPAP 46(11) 806-808.pdf90.36 kBAdobe PDFView/Open

Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.