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dc.contributor.authorKalra, Ekta-
dc.contributor.authorKumar, Anil-
dc.contributor.authorHaldar, Subhasis-
dc.contributor.authorGupta, R S-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.description.abstractA semi-empirical model to analyze the small geometry (short and narrow) effects in LDD MOSEFTs incorporating the dependence of flatband voltage on channel length and width is developed. The analysis includes the short channel, narrow width, LDD and DIBL effects. An expression for threshold voltage based on the effective charge contained in the channel is obtained and the results so obtained are in good agreement with the experimental data. If noise is also evaluated incorporating the voltage drop in n ¯ region and charge induced due to flatband voltage, which matches well with experimental data. en_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.38(08) [August 2000]en_US
dc.titleCharacterization of small geometry LDD MOSFETs with non-pinned flat band voltageen_US
Appears in Collections:IJPAP Vol.38(08) [August 2000]

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