Please use this identifier to cite or link to this item:
|Title:||Characterization of small geometry LDD MOSFETs with non-pinned flat band voltage|
Gupta, R S
|Abstract:||A semi-empirical model to analyze the small geometry (short and narrow) effects in LDD MOSEFTs incorporating the dependence of flatband voltage on channel length and width is developed. The analysis includes the short channel, narrow width, LDD and DIBL effects. An expression for threshold voltage based on the effective charge contained in the channel is obtained and the results so obtained are in good agreement with the experimental data. If noise is also evaluated incorporating the voltage drop in n ¯ region and charge induced due to flatband voltage, which matches well with experimental data.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.38(08) [August 2000]|
Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.