Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/25448
Title: Studies on chemically deposited bismuth sulphotelluride [Bi2(S1-x Tex)3] thin films
Authors: Mane, R K
Ajalkar, B D
Bhosale, P N
Issue Date: Sep-2002
Publisher: NISCAIR-CSIR, India
Abstract: A solution growth process has been employed for the deposition of  [Bi2(S1-x Tex)3] thin fim composite with 0 ≤x≤1. Analytical grade bismuth nitrate complexed with TEA, thioacctamide and sodium tellurosulphite are used as the basic source materials. The samples are obtained at 55 ± 0.5°C in an aqueous alkaline medium and, are characterized by chemical compositional analysis, optical and electrical characterization techniques. The optical absorption spectra for all as-deposited binary and ternary bismuth sulphotelluride thin films are recorded in the wavelength region 400 to 1300 nm. They show a high coefficient of absorption (α = 104 cm-1 ) with an allowed direct type of transition . The optical energy  gap typically decreases from 1.62 eV for Bi 2S3 to 0.65 eV for Bi 2Te3 as x  is increased from 0 to 1. X-ray diffraction study of these films show microcrytalline nature. Electrical resistivity and thermoelectric power measurements have been carried out for all the sample in the temperature range 300 to 500 K. The dependencies of resitivity and thermoelectric power on the temperature show that the Bi2S3, Bi2Te3, and mixed [Bi2(S1-x Tex)3]thin films are semiconducting with n-type  conduction.
Page(s): 660-663
URI: http://hdl.handle.net/123456789/25448
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.40(09) [September 2002]

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