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dc.contributor.authorMasumdar, E U-
dc.contributor.authorMane, S H-
dc.contributor.authorPujari, V B-
dc.contributor.authorDeshmukh, L P-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.description.abstractCdSe:Sb thin films with a varying concentration or Sb3+ (0-5 mol%)have been deposited by employing a chemical deposition process. The composition or the as-grown samples was determined by the chemical analysis and  EDS technique. The XRD analysis revealed that the samples are polycrystalline and exhibit a hexagonal wurtzite and cubic zinc blend phase structures. The calculation of lauttice parameters (a = 4.2998Ǻ and c = 7.042 Ǻ) showed good fit with the JCPD data. The average grain size determined by FWHM method is increased up to 0.1 mol% and then decreased at higher Sb3+doping concentration. Scanning electron micrographs showed crystalline nature width grain size increased considerably and intercrystalline spacing decreased up 10 0.1 mol% Sb doping level. A considerable amount or over growth I fusing or the grains has also been detected. Optical absorption studies revealed a high absorption coefficient (104-105 cm-1 ) with a direct type or transitions (m0.5). The estimated hand gap decreased typically from 1.79 eV to 1.61 eV as Sb3+ concentration was increased from 0 to 0.1 mol% and further, it increased on the higher doping side.en_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.40(09) [September 2002]en_US
dc.titleEffect of antimony dopant on structural and optical properties of CdSe thin filmsen_US
Appears in Collections:IJPAP Vol.40(09) [September 2002]

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