Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/25261
Title: Electrical transport in amorphous Ge14Se86-xTlx system
Authors: Ahmed, A M
Megahid, N M
Ibrahiem, M M
Keywords: de conductivity;Thermoelectric power;Amorphous materials;Ge-Se-Tl chalcogenide glasses;Chalcogenide glasses
Issue Date: Nov-2003
Publisher: NISCAIR-CSIR, India
Abstract: The J-E characteristics, de conductivity and thermoelectric power (TEP) measurements have been carried out on the bulk amorphous Ge14Se86-xTlx  samples as a function of composition (x = 22, 23.5, 25 & 28 mole%) and temperature (240- 420 K). In general, the J-E characteristics are linear for lower voltages and become non-linear at higher voltages. DC conductivity is found to increase with increasing the content of thallium and measuring temperature. The measured TEP possessed positive sign confirming that the samples are p-type and holes are the majority carriers.
Page(s): 863-868
URI: http://hdl.handle.net/123456789/25261
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.41(11) [November 2003]

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