Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/2524
Title: Effect of substrate temperatures, deposition rate and heat treatment on structural and carrier transport mechanisms of thermal evaporated p-Cu₂S/n-CdS heterojunction
Authors: Nahass, M M El
El-Barry, A M A
Keywords: Cu₂S/CdS heterojunction
Thin film
Ilumination
Space charge limited current
Photovoltaic characteristics
Spectral response
Issue Date: May-2007
Publisher: CSIR
Series/Report no.: H01L
Abstract: The p-Cu₂S/n-CdS heterojunction (Hj) has been fabricated by vacuum deposition of p-Cu₂S thin film onto n-CdS thin film. CdS layer was evaporated at substrate temperature, Ts ≈ 473 K and rate of deposition ≈0.06 μm/min. The dark-temperature-current density-voltage (J-V-T) and illumination characteristics were measured over a reasonable temperature range (303-423K). The conduction mechanism was suggested to be thermo ionic for forward applied voltage < 0.2V. For higher voltage, the space charge limited current was the predominant mechanism. In the reverse direction, the generation and recombination mechanisms were the operating mechanisms. Finally, the photovoltaic characteristics and the spectral response of p-Cu₂S/n-CdS were also studied.
Description: 465-475
URI: http://hdl.handle.net/123456789/2524
ISSN: 0019-5596
Appears in Collections:IJPAP Vol.45(05) [May 2007]

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