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|Title:||Effect of doping on stimulated Brillouin scattering in piezoelectric magnetized III-V semiconductors|
Sen, P K
|Keywords:||Stimulated Brillouin scattering;Doping;Piezoelectricity;Magnetic field;III-V semiconductors|
|Abstract:||Using the hydrodynamic model of a semiconductor-plasma and following the coupled mode approach, an analytical investigation has been made for stimulated Brillouin scattering (SBS) resulting from the nonlinear interaction of an intense pump beam with acoustic perturbations internally generated due to piezoelectric and electrostrictive property of the crystal. The analysis deals with the qualitative behaviour of threshold pump electric field for the onset of SBS and resulting gain coefficient with respect to doping concentration (through plasma frequency) in piezoelectric III-V semiconductors subjected to transverse magnetostatic field. The numerical estimates are made for n-type InSb crystal at 77 K duly shined by pulsed 10.6 μm CO₂ laser. The threshold value of pump field required for the onset of SBS is found to lower in the presence of magnetostatic field. At resonance, the Brillouin gain is two hundred and 10⁴ times in the presence of piezoelectricity and magnetostatic field, respectively, than in their absence. Moreover, the SBS gain coefficient increases with increasing in scattering angle and results in maximum value for the backscattered mode. The backward Brillouin gain is found to be 10⁴ times larger than the forward gain. The analysis also suggests the possibility of observing phase conjugation reflectivity as high as ~10⁶ in weakly piezoelectric doped III-V semiconductors subjected to a magnetic field.|
|Appears in Collections:||IJPAP Vol.45(06) [June 2007]|
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