Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/25186
Full metadata record
DC FieldValueLanguage
dc.contributor.authorKumar, Anil-
dc.contributor.authorKalra, Ekta-
dc.contributor.authorBose, Srikanta-
dc.contributor.authorSingh, Adarsh-
dc.contributor.authorBindra, Simrata-
dc.contributor.authorHaldar, Subhasis-
dc.contributor.authorGupta, R S-
dc.date.accessioned2013-12-30T05:20:46Z-
dc.date.available2013-12-30T05:20:46Z-
dc.date.issued2001-11-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/25186-
dc.description731-737en_US
dc.description.abstractAn analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An express ion for channel length modulation factor is also developed and the substrate current is calculated.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.39(11) [November 2001]en_US
dc.titleAnalytical model for saturation drain current and substrate current of fully overlapped LDD MOSFETen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.39(11) [November 2001]

Files in This Item:
File Description SizeFormat 
IJPAP 39(11) 731-737.pdf1.07 MBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.