Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/25186
Title: Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET
Authors: Kumar, Anil
Kalra, Ekta
Bose, Srikanta
Singh, Adarsh
Bindra, Simrata
Haldar, Subhasis
Gupta, R S
Issue Date: Nov-2001
Publisher: NISCAIR-CSIR, India
Abstract: An analytic model for saturation drain current and substrate current of fully overlapped lightly doped drain (FOLD) MOSFET is developed using pseudo-two-dimensional approximation in the channel and drain regions and expression of maximum electric field is obtained. An express ion for channel length modulation factor is also developed and the substrate current is calculated.
Page(s): 731-737
URI: http://hdl.handle.net/123456789/25186
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.39(11) [November 2001]

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