Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/25179
Title: Effect of In content in InxGa1-xSb on breaking of ampoule during growth by vertical directional solidification
Authors: Shashidharan, P
Gokhale, N A
Gadkari, D B
Lal, K B
Gokhale, M R
Arora, B M
Issue Date: Nov-2001
Publisher: NISCAIR-CSIR, India
Abstract: InGaSb crystals have been grown using vertical directional solidification (VDS) technique in closed conical quartz ampoules. InxGa1-xSb Crystals with different In mole fractions in the melt (x = 0.1, 0.25, 0.5 and 0.75) have been grown to study the effect of mole fraction on the breaking of the ampoule. Growth with In mole fraction x = 0.5 in the melt resulted in breaking of the ampoule. For other compositions, no breaking of the ampoule occurred. The problem of breaking of ampoule was circumvented by encapsulating the material containing quartz ampoule in another quartz ampoule. The double ampoule prevents the melt from coming into contact with atmospheric air in case of a breakage enabling the growth of crystals from melts with 50 % In composition. Sticking of the ingot to the ampoule has not been observed for any of the compositions.
Page(s): 704-706
URI: http://hdl.handle.net/123456789/25179
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.39(11) [November 2001]

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