Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/25145
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSathish, S-
dc.contributor.authorShekar, B Chandar-
dc.date.accessioned2013-12-27T10:20:16Z-
dc.date.available2013-12-27T10:20:16Z-
dc.date.issued2014-01-
dc.identifier.issn0975-1041 (Online); 0019-5596 (Print)-
dc.identifier.urihttp://hdl.handle.net/123456789/25145-
dc.description64-67en_US
dc.description.abstractThin films of nano scale poly (methyl methacrylate) (PMMA) were prepared by fast dip coating technique (FDCT). XRD spectra indicated the amorphous nature of the films. The closer SEM inspection revealed that self-assembled mesoscopic cells for both as grown and annealed PMMA films. Low leakage current was observed in the J-V characteristics for the voltage ranges studied. The absence of hysteresis in the J-V characteristics for the forward and reverse sweep direction eliminates the presence of deep traps in the PMMA thin films studied. The observed surface morphology, thermal stability and J-V behaviour indicated that these films could be used as AFM data storage devices as an efficient dielectric layer in field effect organic thin film transistors.en_US
dc.language.isoen_USen_US
dc.publisherNISCAIR-CSIR, Indiaen_US
dc.rights CC Attribution-Noncommercial-No Derivative Works 2.5 Indiaen_US
dc.sourceIJPAP Vol.52(01) [January 2014]en_US
dc.subjectPMMAen_US
dc.subjectFast dip coating techniqueen_US
dc.subjectMorphologyen_US
dc.subjectMesoscopicen_US
dc.subjectFTIRen_US
dc.subjectXRDen_US
dc.subjectSEMen_US
dc.subjectThin filmen_US
dc.subjectCharacterizationen_US
dc.titlePreparation and characterization of nano scale PMMA thin filmsen_US
dc.typeArticleen_US
Appears in Collections:IJPAP Vol.52(01) [January 2014]

Files in This Item:
File Description SizeFormat 
IJPAP 52(1) 64-67.pdf133.41 kBAdobe PDFView/Open


Items in NOPR are protected by copyright, with all rights reserved, unless otherwise indicated.