Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/25055
Title: Modeling, characterization and optimization of tri-step doped InAIAs/InGaAs heterostructure, InP based HEMT for microwave frequency applications
Authors: Gupta, Ritesh
Gupta, Mridula
Gupta, R S
Issue Date: Mar-2003
Publisher: NISCAIR-CSIR, India
Abstract: A new analytical model for tri-step doped InAIAs/InGaAs heterostructure InP based HEMT has been proposed in this paper. Maximum sheet carrier density has been formulated considering the limitation arising from the doping- thickness product. A comparison is made between conventional pulsed doped structure and equivalent tri -step doped structures to validate the model. The conventional pulsed doped device is also optimized for higher sheet carrier concentration/effective parallel conduction voltage/transconductance/cut-off frequency by varying the Schottky layer thickness for identical carriers using equivalent tri-step eloped structure.
Page(s): 223-231
URI: http://hdl.handle.net/123456789/25055
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.41(03) [March 2003]

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