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|Title:||Modeling, characterization and optimization of tri-step doped InAIAs/InGaAs heterostructure, InP based HEMT for microwave frequency applications|
Gupta, R S
|Abstract:||A new analytical model for tri-step doped InAIAs/InGaAs heterostructure InP based HEMT has been proposed in this paper. Maximum sheet carrier density has been formulated considering the limitation arising from the doping- thickness product. A comparison is made between conventional pulsed doped structure and equivalent tri -step doped structures to validate the model. The conventional pulsed doped device is also optimized for higher sheet carrier concentration/effective parallel conduction voltage/transconductance/cut-off frequency by varying the Schottky layer thickness for identical carriers using equivalent tri-step eloped structure.|
|ISSN:||0975-1041 (Online); 0019-5596 (Print)|
|Appears in Collections:||IJPAP Vol.41(03) [March 2003]|
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