Please use this identifier to cite or link to this item: http://nopr.niscair.res.in/handle/123456789/25053
Title: Anomalous resistive transition and frequency dependent dielectric constant of Zn1-xMxO [M=Li (Mg, Ba)] system
Authors: Khan, M K R
Rahman, M Mozibur
Mia, S Javed
Shahajahan, M
Issue Date: Mar-2003
Publisher: NISCAIR-CSIR, India
Abstract: The II-VI materials of Zn1-xMxO have been synthesized by solid-state reaction method and their structural, electrical and dielectric properties studied. The lattice parameters of these materials are found to be consistent with the reported values. The dielectric constant measured at different five frequencies agrees well with the published values and found to be maximum for doping concentration x= 0.2, at all frequencies. A de resistive anomaly was found for all samples at a certain temperature called transition temperature (Td-s) from dielectric to semiconducting state, which depends on the concentration and nature of the dopant atoms in ZnO.
Page(s): 211-216
URI: http://hdl.handle.net/123456789/25053
ISSN: 0975-1041 (Online); 0019-5596 (Print)
Appears in Collections:IJPAP Vol.41(03) [March 2003]

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